Document
ADVANCE INFORMATION
ZXTC2061E6
12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26
Features
NPN + PNP Combination BVCEO > 12 (-12)V BVEBO > 7 (-7)V Continuous Collector Current IC = 5 (-3.5)A VCE(sat) < 32 (-70)mV @ 1A RCE(sat) = 25 (45)mΩ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description
Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications.
Mechanical Data
Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate)
Applications
MOSFET and IGBT Gate Driving Motor Drive
SOT26
C1 C2 C1
E1
B1 B2
B1 B2
Top View
Q1 E1
Q2 E2
Device Symbol
C2 E2
Top View Pin-Out
Ordering Information (Note 4)
Product
Complianace
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXTC2061E6TA
AEC-Q101
2061
7
8 3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
2061
YM
2061 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
2016 D
Month Code
Jan Feb 12
2017 E
Mar 3
2018 F
Apr 4
2019 G
May 5
2020 H
Jun 6
2021 I
2022 J
2023 K
Jul Aug Sep Oct 78 9O
2024 L
Nov N
2025 M
Dec D
ZXTC2061E6
Document Number: DS33646 Rev: 3 - 2
1 of 8 www.diodes.com
November 2015
© Diodes Incorporated
ADVANCE INFORMATION
ZXTC2061E6
Absolute Maximum Ratings – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulsed Collector Current Base Current
Symbol VCBO VCEO VEBO IC ICM IB
Value 20 12 7 5 12 1
Unit V V V A A A
Absolute Maximum Ratings – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulsed Collector Current Base Current
Symbol VCBO VCEO VEBO IC ICM IB
Value -12 -12 -7 -3.5 -10 -1
Unit V V V A A A
Thermal Characteristics (@TA = +25°C, unless otherwise specifie.