ZXTN5551FL

ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 330mW Complementary part number ZXTP5401FL Description A high voltage NPN transistor in a small outline surface mount package. C Features 160V rating SOT23 package B E Applications High voltage amplification E C Tape width (mm) 8 Quantity per reel 3000 Ordering information Device ZXTN5551FLTA Reel size (inches) 7 B Pinout - top view Device marking N51 www.DataSheet4U.com Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTN5551FL Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Power dissipation at Tamb =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC PD Limit 180 160 6 600 330 2.64 -55 to 150 Unit V V V mA mW mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Limit 379 Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. www.DataSheet4U.com Issue 1 - August 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTN5551FL Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Collector cut-off current Symbol BVCBO BVCEO Min. 180 16...