S11156-2048

CCD linear image sensors S11155-2048 S11156-2048 Back-thinned CCD image sensors with electronic shutter function The S11155-2048 and S11156-2048 are back-thinned CCD linear image sensors with an internal electronic shutter for spectrometers. These image sensors use a resistive gate structure that allows high-speed transfer. Each pixel has a lengthwise size needed by spectrometers but ensures readout with low image lag. Features Built-in electronic shutter Minimum integration time: 30 μs High sensitivity from the ultraviolet region (spectral response range: 200 to 1100 nm) Readout speed: 10 MHz max. Image lag: 0.1% typ. Applications Spectrometers Image readout General ratings Parameter Pixel size Number of total pixels Number of active pixels Active area Horizontal clock phase Output circuit Package Window*1 S11155-2048 14 (H) × 500 (V) μm 2068 (H) × 1 (V) 2048 (H) × 1 (V) 28.672 (H) × 0.500 (V) mm 28.672 (H) × 1.000 (V) mm 2-phase Two-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outline) Quartz glass S11156-2048 14 (H) × 1000 (V) μm *1: Temporary window type (ex. S11155-2048N) is available upon request. Resistive gate structure In ordinary CCDs, one pixel contains multiple electrodes and a signal charge is transferred by applying different clock pulses to those electrodes [Figure 1]. In resistive gate structures, a single high-resistance electrode is formed in the active area, and a signal charge is transferred by means of a potential slope that...