IRFP4368PBF

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S 75V 1.46mΩ 1.85mΩ 350Ac 195A D D G S TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 350c 250c 195 1280 520 3.4 ± 20 13 -55 to + 175 300 10lbxin (1.1Nxm) Units A W W/°C V V/ns °C Avalanche Characteristics Single Pulse Avalanche Energy e EAS (Thermally limited) www.DataSheet4U.com Avalanche Current d IAR EAR Repetitive Avalanche Energy g 430 See Fig. 14, 15, 22a, 22b mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case k Case-to-Sink, Flat Greased Surface Junction-t...