WT-Z106N-AU4

WT-Z106N-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4 2. Structure: 2-1 Planar type: N/P Diode 2-2 Electrodes: Top side:Gold Pad.(Cathode) Back side:Gold Layer.(Anode) 3. Size: 3-1 Chip size: 6.88 mils x 6.88 mils (175 µm x 175 µm). 3-2 Chip thickness: 3.3 ± 0.6 mils (85 µm ± 15 µm). 3-3 Active area: 4.1 mils x 4.1 mils (105 µm x 105 µm). 3-4 Bonding pad: 4.5 mils x 4.5mils (115 µm x 115 µm). 3-5 Pattern drawing: Refer to the attached drawing. 4. Electrical Characteristics (Ta=25ºC) Parameter Zener Voltage Reverse Leakage Current Forward Voltage Electrostatic Discharge Symbol Vz Condition Iz=5mA Min. Typ. Max. Unit V 5.7 8 - 6.7 100 1.2 - IR VR=4V nA Vf ESD IF=20mA HBM MIL-STD883 V KV 5. Drawing: Bonding pad N Top side P-sub Back side www.DataSheet4U.com WEITRON TECHNOLOGY CO., LTD. TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw 24-Nov-05 ...