WT-Z106P-4-12

WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy(Anode). Back side:Gold Layer(Cathode). 3. Size: 3-1. *Chip size : 6.88 mils x 6.88 mils (175µm x 17.5µm ). 3-2. Chip thickness : 3.3 ± 0.6 mils (85 ± 15µm ). 3-3. Active area : 4.1 mils x 4.1 mils (105µm x 105µm). 3-4. Bonding pad : 4.5 mils x 4.5 mils (115µm x 115µm) . 3-5. Pattern drawing : Refer to the attached drawing. * Including scribing line. The chip size is about 5.9mil(0.150mm) after dicing. 4. Electrical Characteristics (Ta=25 C) Parameter Zener Voltage Symbol Condition IZ=5mA Min. 11 0.75 Typ. - Max. 13 1.2 Unit V V nA VZ Vf Forward Voltage Reverse Leakage Current Electrostatic Discharge IF=20mA IR VR=10V HBM MIL-STD 883 - - 100 ESD 8.0 - - KV 5. Drawing: Bonding pad P Top side N-sub www.DataSheet4U.com Back side WEITRON TECHNOLOGY CO., LTD. TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw 05-Dec-06 ...