WTC2302

WTC2302 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.3 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1, 2 Total Power Dissipation (TA =25°C ) Maximum Junction-ambient 3 (T A Unless Otherwise Specified) Symbol V DS VG S ID IDM PD R θJA T J , T s tg Value 20 ±8 2.3 8 0.9 145 -55~+150 Unit V A A W °C /W °C Operating Junction and Storage Temperature Range www.DataSheet4U.com Device Marking WTC2302 = N02 WEITRON http://www.weitron.com.tw 1/6 Rev.B 24-Aug-09 WTC2302 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-10μA Gate-Source Threshold Voltage VDS=VGS,ID=250μA Gate-Source Leakage Current VGS= ±8V Drain-Source Leakage Current(Tj=25℃) VDS=9.6V,VGS=0 Drain-Source On-Resistance VGS=4.5V,ID=2.8A VGS=2.5V,ID=2.0A Forward Transconductance VDS=5V,ID=4.0A gfs RDS(on) 40 50 6.5 60 115 mΩ V(BR)DSS VGS(Th) IGSS IDSS 20 0.6 V 1.2 ±100 nA - - -1 μA S Dynamic Input Capacitance VGS=0V,VDS=6V,f=1.0MHz Output Capacitance VGS=0V,VDS=6V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=6V,f=1.0MHz Ciss Coss Crss 427.12 80.56 57 pF www.DataSheet4U.com WEITRON...