WTC2306

WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System SOT-23 Maximum Ratings (TA Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value 30 ±12 5.8 30 1.4 140 -55~+150 -55~+150 Unit V V A A W °C/W °C °C Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board www.DataSheet4U.com 3. Guaranteed by design; not subject to production testing Device Marking WTC2306 = N06 WEITRON http://www.weitron.com.tw 1/4 Rev.B 17-Aug-09 WTC2306 Electrical Characteristics (TA=25°C Unless Otherwise Specified) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V, ID=250µA Gate-Source Threshold Voltage VDS=VGS, ID=250µA Gate-Source Leakage Current +12V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=24V , VGS=0V Drain-Source On-Resistance VGS=2.5V , ID=4.0A VGS=4.5V , ID=5.0A VGS=10V , ID=5.8A Gate Resistance VGS=0V, VDS=0V, f=1HMz Forward Transconductance VD...