WTM2310A

WTM2310A N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.0 AMPERES DRAIN SOUCE VOLTAGE 60 VOLTAGE 2 SOURCE Features: * Simple Drive Requirement. * Super High Density Cell Design for Extremely Low RDS(ON). 1 2 3 1. GATE 2. DRAIN 3. SOURCE SOT-89 Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation (T A =25°C ) Maximum Junction-Ambient 3 Operating Junction Temperature Range Storage Temperature Range Note 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface mounted on FR4 board, t ≤10sec. www.DataSheet4U.com Symbol V DS VG S TA=25°C TA=70°C ID IDM PD R θJA TJ Tstg Value 60 ±20 5.0 4.0 10 1.50 83.3 -55~+150 -55~+150 Unit V V A A W °C/W °C °C Device Marking WTM2310A = 2310A WEITRON http://www.weitron.com.tw 1/5 04-Feb-10 WTM2310A Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) unless otherwise specified) Min. 60 0.5 - Symbol BVDSS VGS(th) gfs IGSS IDSS Typ. 12 4.0 1.2 1.0 6 12 18 10 320 42 20 Max. 1.5 ±100 1 10 115 125 - Unit V V S nA uA uA m Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=15V, ID=4A VGS= ±20V VDS=60V, VGS=0 VDS=60V, VGS=0 VGS=10V, ID=5.0A VGS=4.5V, ID=...