AP1332GEU

AP1332GEU Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Gate Drive ▼ Small Package Outline ▼ 2KV ESD Rating(Per MIL-STD-883D) ▼ RoHS Compliant SOT-323 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S 20V 600mΩ 600mA Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating 20 ±6 600 470 2.5 0.35 0.003 -55 to 150 -55 to 150 Unit V V mA mA A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 360 Unit ℃/W www.DataSheet4U.com Data and specifications subject to change without notice 200606051-1/4 AP1332GEU Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 21 53 100 125 38 17 12 Max. 600 850 1.2 1 10 ±10 2 60 Unit V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA ...