AP1333GU

AP1333GU Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Gate Drive ▼ Small Package Outline ▼ Fast Switching Speed ▼ RoHS Compliant SOT-323 G D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S -20V 800mΩ -550mA Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -20 ± 12 -550 -440 2.5 0.35 0.003 -55 to 150 -55 to 150 Unit V V mA mA A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 360 Unit ℃/W www.DataSheet4U.com Data and specifications subject to change without notice 200822051-1/4 AP1333GU Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 - Typ. 0.01 1 1.7 0.3 0.4 5 8 10 2 66 25 20 Max. 600 800 1000 -1.2 -1 -1 0 ±100 2.7 105.6 - Unit V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-550...