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TS4448RW

Taiwan Semiconductor

350mW High Speed SMD Switching Diode

Small Signal Product TS4448 RW Taiwan Semiconductor 350mW High Speed SMD Switching Diode FEATURES - Designed for moun...


Taiwan Semiconductor

TS4448RW

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Description
Small Signal Product TS4448 RW Taiwan Semiconductor 350mW High Speed SMD Switching Diode FEATURES - Designed for mounting on small surface - Extremely thin / leadless package - High mounting capability, strong surage with stand, high reliability - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) 1005 MECHANICAL DATA - Case: 1005 - Terminal: Gold plated, solderable per MIL-STD-750, method 2026 - Polarity: Indicated by cathode band - Weight: 6 mg (approximately) - Marking code: S5 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Repetitive Peak Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width = 1 μs Pulse Width = 8.3 ms PD VRRM IO IFSM 200 100 125 2 1 Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range (Note 1) RθJA TJ , TSTG 500 -40 to +125 PARAMETER Reverse Breakdown Voltage (Note 2) Forward Voltage Reverse Leakage Current Junction Capacitance Reverse Recovery Time IF=5mA IF=100mA VR=20V VR=80V VR=0V, f=1.0MHz (Note 3) Note 1: Valid provided that electrodes are kept at ambient temperature Note 2: Test condition : IR=100μA Note 3: Test condition : IF=IR=10mA, RL=100Ω, IRR=1mA SYMBOL V(BR) VF IR CJ trr MIN - 0.62 - MAX 80 0.72 1.00 25 100 9 9 UNIT mW V mA A oC/W oC UNIT V V nA pF ns Document Number: DS_S1501011 Version: D15 Small Signal Product RATINGS AND...




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