60V N-Channel MOSFET
TSM2N7002KD
60V N-Channel MOSFET
SOT-363
Pin Definition: 1. Source 2 6. Drain 2 2. Gate 2 5. Gate 1 3. Drain 1 4. Source...
Description
TSM2N7002KD
60V N-Channel MOSFET
SOT-363
Pin Definition: 1. Source 2 6. Drain 2 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
60 2 @ VGS = 10V 4 @ VGS = 4.5V
ID (mA)
300 200
Features
● ● ● ● Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive
Block Diagram
Ordering Information
Part No.
TSM2N7002KDCU6 RF
Package
SOT-363
Packing
3Kpcs / 7” Reel
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous @ TA=25ºC Pulsed Continuous @ TA=25ºC Pulsed
Symbol
VDS VGS ID IDM IDR IDMR PD TJ TJ, TSTG
Limit
60 ±20 300 800 300 800 300 +150 -55 to +150
Unit
V V mA
Drain Reverse Current Maximum Power Dissipation Operating Junction Temperature
mA mW
o o
C C
Operating Junction and Storage Temperature Range
Thermal Performance
Parameter
Lead Temperature (1/8” from case) www.DataSheet4U.com Junction to Ambient Thermal Resistance (PCB mounted)
Symbol
TL RӨJA
Limit
5 625
Unit
S
o
C/W
Notes: a. Pulse width ≤300us, Duty cycle ≤2% b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch. c. The power dissipation of the package may result in a continuous drain current.
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Version: B09
TSM2N7002KD
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain ...
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