IPA028N08N3G

OptiMOS(TM)3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type IPA028N08N3 G IPA028N08N3 G Product Summary VDS RDS(on),max ID 80 V 2.8 mW 89 A Package PG-TO-220-FP Marking 028N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current I D T C=25 °C2) 89 T C=100 °C 62 Pulsed drain current3) I D,pulse T C=25 °C 352 Avalanche energy, single pulse4) E AS I D=89 A, R GS=25 W 1430 Gate source voltage V GS ±20 Power dissipation P tot T C=25 °C 42 Operating and storage temperature T j, T stg -55 ... 175 IEC climatic category; DIN IEC 68-1 55...