OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC...
OptiMOS(TM)3 Power-
Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21
Type
IPA037N08N3 G
Product Summary VDS RDS(on),max ID
IPA037N08N3 G
80 V 3.7 mW 75 A
Package Marking
PG-TO220-FP 037N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage
ID
I D,pulse E AS V GS
T C=25 °C2) T C=100 °C T C=25 °C I D=75 A, R GS=25 W
75 54 300 680 ±20
Power dissipation
P tot T C=25 °C
41
Operating and storage temperature T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1)J-ST...
