IPA086N10N3G

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.4 Final PowerManagement&Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Fully isolated package (2500 VAC; 1 minute) Type IPA086N10N3 G 100 V 8.6 mW 45 A Package Marking PG-TO220-FP 086N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E ...