IPA126N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product...
IPA126N10N3 G
OptiMOSTM3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max ID 100 12.6 35 V mΩ A
Ideal for high-frequency switching and synchronous rectification Type IPA126N10N3 G
Package Marking
PG-TO220-FP 126N10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 www.DataSheet4U.com
1) 2)
Value 35 25 140 90 ±20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 °C I D=35 A, R GS=25 Ω
mJ V W °C
T C=25 °C
33 -55 ... 175 55/175/56
J-STD20 and JESD22 See figure 3
Rev. 2.2
page 1
2009-07-09
IPA126N10N3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case R thJC 4.5 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=45 µA V DS=100 V, V GS=0 V, T j=25 °C V DS=100 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-...