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IPA60R160C6

Infineon Technologies

MOSFET

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R160C6 ...


Infineon Technologies

IPA60R160C6

File Download Download IPA60R160C6 Datasheet


Description
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R160C6 DataSheet Rev.2.2 Final PowerManagement&Multimarket 600V CoolMOS" C6 Power Transistor 1 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 drain pin 2 gate pin 1 source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 650 0.16 75 70 6 500 V ! nC A µJ A/µs Type / Ordering Code IPW60R160C6 IPB60R1...




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