Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor IPx60R190C6
DataSheet
Rev.2.3 Final
PowerManagement&Multimarket
600V CoolMOS" C6 Power Transistor
1 Description
CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt
650 0.19 63 59 5.2 500
V ! nC A µJ A/µs
IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6
drain pin 2
gate pin 1
source pin 3
Type / Ordering Code IPW60R190C6 IPB60R190C6 IPI60R190C6 IPP60R190C6 IPA60R190C6
Package PG-TO247 PG-TO263 PG-TO262 PG-TO220 PG-TO220 FullPAK
Marking 6R190C6
Related Links IFX C6 Product Brief IFX C6 Portfolio IFX CoolMOS Webpage IFX Design tools
1) J-STD20 and JESD22
Rev. 2.3
Page 2
2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Rev. 2.3
Page 3
2018-02-26
600V CoolMOSTM C6 Power Transistor IPx60R190C6
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings Parameter
Continuous drain current1)
Pulsed drain current2) Avalanche energy, single pulse
Symbol
ID
ID,pulse EAS
Values Min. Typ. Max. - - 20.2
12.8 - - 59 - - 418
Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage
EAR IAR dv/dt
VGS
- 20 - 30
Power dissipation for TO-220, TO-247, TO-262, TO-263
Power dissipation for TO-220 FullPAK
Ptot Ptot
-
Operating and storage temperature
Mounting torque TO-220, TO-247
Tj,Tstg
- 55 -
Mounting torque TO-220 FullPAK
Continuous diode forward current Diode pulse current2) Reverse diode dv/dt3)
Maximum diode commutation speed3)
IS
IS,pulse dv/dt dif/dt
-
Insulation withstand voltage VISO TO-220 FullPAK
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse widthtp limited by Tj,max 3) Identical low side and high side switch with identical RG
-
-
-
-
-
-
0.63 3.4 50 20 30 151
34
150 60
50
17.5 59 15 500
2500
Unit Note / Test Condition
A TC= 25 °C TC= 100°C
A TC=25 °C mJ ID=3.4 A,VDD=50 V
(see table 21) ID=3.4 A,VDD=50 V A V/ns VDS=0...480 V V static AC (f>1 Hz) W TC=25 °C
°C Ncm M3 and M3.5 screws
M2.5 screws
A TC=25 °C A TC=25 °C V/ns VDS=0...400 V,ISD& ID, A/µs Tj=25 °C
(see table 22) V VRMS, TC =25 °C, t = 1 min
Final Data Sheet Rev. 2.3
4 Page 4
Rev. 2.2, 2014-12-02 2018-02-26
3 Thermal characteristics
600V CoolMOS" C6 Power Transistor IPx60R190C6
Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R190C6),TO-247 (IPW60R190C6),TO-262 (IPI60R190C6)
Parameter
Symbol Min.
Values
Typ.
Max.
Unit Note / Test Condition
Thermal resistance, ju.