L14G3

HERMETIC SILICON PHOTOTRANSISTOR L14G1 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) L14G2 L14G3 0.030 (0.76) NOM 0.255 (6.47) 0.225 (5.71) 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 0.038 (0.97) 0.046 (1.16) 0.036 (0.92) 45° Ø0.020 (0.51) 3X 3 (CONNECTED TO CASE) COLLECTOR 3 BASE 2 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 EMITTER DESCRIPTION The L14G1/L14G2/L14G3 are silicon phototransistors mounted in a narrow angle, TO-18 package. FEATURES Hermetically sealed package Narrow reception angle  2001 Fairchild Semiconductor Corporation DS300307 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14G1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD L14G2 L14G3 Unit °C °C °C °C V V V mW mW Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 45 45 5 300 600 NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommen...