HERMETIC SILICON PHOTOTRANSISTOR
L14N1
PACKAGE DIMENSIONS
0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52)
L14N2
0...
HERMETIC SILICON PHOTO
TRANSISTOR
L14N1
PACKAGE DIMENSIONS
0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52)
L14N2
0.030 (0.76) MAX
0.210 (5.34) MAX
0.500 (12.7) MIN
0.100 (2.54) 0.100 (2.54) DIA. 2 1 0.038 (.97) NOM 0.046 (1.16) 0.036 (0.92) 45° Ø0.021 (0.53) 3X 3 0.050 (1.27)
SCHEMATIC
(CONNECTED TO CASE) COLLECTOR 3
BASE 2
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
1 EMITTER
DESCRIPTION
The L14N1/L14N2 are silicon photo
transistors mounted in a wide angle, TO-18 package.
FEATURES
Hermetically sealed package Wide reception angle Device can be used as a photodiode by using the collector and base leads.
2001 Fairchild Semiconductor Corporation DS300308 6/01/01
1 OF 4
www.fairchildsemi.com
HERMETIC SILICON PHOTO
TRANSISTOR
L14N1
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 30 40 5 300 600
L14N2
Unit °C °C °C °C V V V mW mW
NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipat...