2SC1971
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mo...
2SC1971
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEATURES INCLUDE:
Replaces Original 2SC1971 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package
PACKAGE STYLE TO-220AB (COMMON EMITTER)
MAXIMUM RATINGS
IC VCBO PDISS TSTG θJC 2.0 A 35 V 12.5 W @ TC = 25 °C -55 °C to +150 °C 10 °C/W
1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO ICBO IEBO hFE C IC = 50 mA IC = 10 mA
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
17 35 4.0 500 500
UNITS
V V V µA µA --pF dB % W
IE = 5.0 mA VCES = 25 V VEB = 3.0 V VCE = 10 V V = 30 V PIN = 0.6 W IC = 100 mA f = 1.0 MHz f =175 MHz
10
50 15
180
CB OB www.DataSheet4U.com
GPE η POUT
VCC = 13.5 V
10 60 6.0
70 7.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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