CMLT5088EM

CMLT5088EM SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE(ON) characteristics. This device is designed for applications requiring high gain and low noise. MARKING CODE: 88M SOT-563 CASE Device is Halogen Free by design FEATURES: Transistor pair matched for VBE(ON) MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 50 50 5.0 100 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ICBO VCB=20V IEBO VEB=3.0V BVCBO IC=100μA 50 BVCEO IC=1.0mA 50 BVEBO IE=100μA 5.0 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=5.0V, IC=0.1mA 300 hFE VCE=5.0V, IC=1.0mA 300 hFE VCE=5.0V, IC=10mA 300 hFE VCE=5.0V, IC=100mA 50 fT VCE=5.0V, IC=500μA, f=20MHz 100 Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 350 NF VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz 50 50 135 65 8.7 45 100 110 400 700 800 430 900 435 430 125 4.0 15 1400 3.0 UNITS nA nA V V V mV mV mV MHz pF pF d...