CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE
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DESCRIPTION: ...
CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON
SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon
Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E ENHANCED SPECIFICATIONS: ♦ IF from 100mA max to 200mA max.
SOD-523 CASE
♦ ♦
BVR from 30V min to 40Vmin. VF from 1.0V max to 0.8V max.
♦Peak Repetitive Reverse Voltage ♦Continuous Forward Current
Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
MAXIMUM RATINGS: (TA=25°C)
SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA
40 200 350 750 250 -65 to +150 500
UNITS V mA mA mA mW °C °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=25V 90 IR VR=25V, TA=100°C 25 IR=100µA 40 50 ♦BVR VF IF=2.0mA 0.29 IF=15mA 0.37 ♦VF IF=100mA 0.61 ♦VF ♦♦VF IF=200mA 0.65 CT VR=1.0V, f=1.0MHz 7.0 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω
MAX 500 100 0.33 0.42 0.80 1.0 5.0
UNITS nA μA V V V V V pF ns
♦ ♦♦
Enhanced specification. Additional Enhanced specification.
R2 (25-January 2010)
www.DataSheet4U.com
CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-523 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Cathode 2) Anode MARKING CODE: 4E
R2 (25-January 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
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