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CMPD914E

Central Semiconductor

ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE

CMPD914E ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m D...


Central Semiconductor

CMPD914E

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Description
CMPD914E ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications. MARKING CODE: C5DE FEATURED ENHANCED SPECIFICATIONS: SOT-23 CASE ♦ ♦ BVR from 100V min to 120V min. (150V TYP) VF from 1.0V max to 0.85V max. (0.72V TYP) UNITS 75 120 250 250 4000 2000 1000 350 -65 to +150 357 MAX 25 5.0 120 150 0.720 0.915 0.850 0.970 2.0 4.0 V V mA mA mA mA mA mW °C °C/W UNITS nA μA V V V pF ns MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL VR VRRM IF IFRM IFSM IFSM IFSM PD TJ, Tstg ΘJA ♦ Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=20V VR=75V IR=100µA IF=10mA IF=100mA VR=0, f=1.0MHz IR=IF=10mA, RL=100Ω, Rec. to 1.0 mA Enhanced specification. Additional Enhanced specification. ♦ BVR ♦ VF ♦♦ VF CT trr IR ♦ ♦♦ R3 (25-January 2010) www.DataSheet4U.com CMPD914E ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode 2) N...




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