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CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802A FEATURES: • Low rDS(ON) • Low VDS(ON) • Low threshold voltage • Fast switching • Logic level compatibility
SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA otherwise noted) MIN 50 50 20 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 1.0 500 UNITS V V V mA mA A A mW °C °C/W UNITS nA μA μA mA V V V V V Ω Ω Ω Ω
SOT-23 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment
MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=50V, VGS=0 IDSS VDS=50V, VGS=0, TJ=125°C ID(ON) VGS=10V, VDS=10V BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA VSD VGS=0, IS=115mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, TJ=125°C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C
500 50 1.0
2.5 1.5 0.15 1.3 2.5 4.0 3.0 5.0
R1 (27-January 2010)
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CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
ELECTRICAL SYMBOL gFS Crss Ciss Coss ton, toff CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VDS =10V, ID=200mA 200 VDS=25V, VGS=0, f=1.0MHz 7.0 VDS=25V, VGS=0, f=1.0MHz 70 VDS=25V, VGS=0, f=1.0MHz 15 VDD=30V, VGS=10V, ID=200mA, RG=25Ω, RL=150Ω 20
UNITS mS pF pF pF ns
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C802A
R1 (27-January 2010)
w w w. c e n t r a l s e m i . c o m
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