IPW90R1K2C3
CoolMOS™ Power Transistor
Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak cur...
IPW90R1K2C3
CoolMOS™ Power
Transistor
Features Lowest figure-of-merit R ON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge
Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 1.2 28 V Ω nC
PG-TO247
CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS
Type IPW90R1K2C3
Package PG-TO247
Marking 9R1K2C
Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current 2) Avalanche energy, single pulse Avalanche energy, repetitive t AR 2),3) Avalanche current, repetitive t AR 2),3) MOSFET dv /dt ruggedness
www.DataSheet4U.com Gate source voltage
Value 5.1 3.2 10 68 0.31 0.92
Unit A
I D,pulse E AS E AR I AR dv /dt V GS
T C=25 °C I D=0.92 A, V DD=50 V I D=0.92 A, V DD=50 V
mJ
A V/ns V
V DS=0...400 V static AC (f>1 Hz)
50 ±20 ±30 83 -55 ... 150
Power dissipation Operating and storage temperature Mounting torque Rev. 1.0
P tot T J, T stg
T C=25 °C
W °C Ncm 2008-07-30
M3 and M3.5 screws page 1
60
Please note the new package dimensions arccording to PCN 2009-134-A
IPW90R1K2C3
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current Reverse diode dv/dt
2) 4)
Symbol Conditions IS I S,puls...