SIR870DP

N-Channel 100 V (D-S) MOSFET SiR870DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0060 at VGS = 10 V 100 0.0064 at VGS = 7.5 V 0.0078 at VGS = 4.5 V ID (A)a 60 60 60 Qg (Typ.) 26.7 nC PowerPAK® SO-8 6.15 mm S 1 S 5.15 mm 2 S 3 G 4 D 8 D 7 D 6 D 5 Bottom View Ordering Information: SiR870DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Fixed Telecom D DC/DC Converter Primary and Secondary Side Switch G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 TC = 25 °C 60a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 60a 22.8b, c Pulsed Drain Current TA = 70 °C 18.2b, c A IDM 100 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 60a 5.6b, c Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS 35 EAS 61 mJ TC = 25 °C 104 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 66.6 6.25b, c W TA = 70 °C 4b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (D...