New Product
VBT2045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 5.0 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
• Not recommended for PCB bottom side wave mounting • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VBT2045C
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 45 V 160 A 0.41 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM TJ, TSTG SYMBOL VRRM VBT2045C 45 20 A 10 160 - 40 to + 150 A °C UNIT V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range
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Document Number: 89359 Revision: 26-Oct-10
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
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New Product
VBT2045C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode IF = 10 A IF = 5 A IF = 10 A Reverse current per diode Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms VR = 45 V TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL TYP. 0.44 0.49 0.33 0.41 IR (2) 10 MIN. 0.58 V 0.52 2000 30 μA mA UNIT
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER per diode Typical thermal resistance per device RθJC SYMBOL VBT2045C 3.0 °C/W 2.0 UNIT
ORDERING INFORMATION (Example)
PACKAGE TO-263AB TO-263AB PREFERRED P/N VBT2045C-E3/4W VBT2045C-E3/8W UNIT WEIGHT (g) 1.38 1.38 PACKAGE CODE 4W 8W BASE QUANTITY 50/tube 800/reel DELIVERY MODE Tube Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
6 D = 0.8 D = 0.5 D = 0.3 4 D = 0.2 3 D = 0.1 T 2 D = 1.0
Average Forward Rectified Current (A)
20
5
16
12
8
4
Average Power Loss (W)
1
D = tp/T
tp
0 100
0 110 120 130 140 150 0 2 4 6 8 10 12
Case Temperature (°C)
Average Forward Current (A)
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Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 89359 Revision: 26-Oct-10
New Product
VBT2045C
Vishay General Semiconductor
100
10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p
Instantaneous Forward Current (A)
10 TA = 125 °C
Junction Capacitance (pF)
TA = 150 °C
TA = 100 °C
1000
1 TA = 25 °C
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
100 0.1 1 10 100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
TA = 150 °C 10 TA = 125 °C TA = 100 °C 1
Junction to Case
1
0.1
0.01
TA = 25 °C
0.001 20 40 60 80 100
0.1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85) 0.591 (15.00)
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0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41)
0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79)
Document Number: 89359 Revision: 26-Oct-10
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 3
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Disclaimer
All product specifications and data are subject to change withou.