2SA812K
Elektronische Bauelemente -50 V, -100 mA PNP Epitaxial Planar Transistor
RoHS Compliant Product A suffix of “-C...
2SA812K
Elektronische Bauelemente -50 V, -100 mA
PNP Epitaxial Planar
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen and lead free
FEATURES
z z z
Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) High Voltage: VCEO = -50V
SOT-23
3 Collector 1
Base
PACKAGE DIMENSIONS
Dim A
2
Emitter
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
B C D G
A L
3
H
K B S
2
J
J K
C
Top View
1
L S V
V
G
D
H
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC Pc TJ, TSTG
Ratings
-60 -50 -5 -100 200 +150, -55 ~ +150
Unit
V V V mA mW ℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE hFE
Min.
-60 -50 -5 -0.58 90 -
Typ.
180 4.5
Max.
-100 -100 300 -0.68 600 -
Unit
V V V nA nA mV V IC=-100uA IC=-1mA IE=-100uA VCB=-60V VEB=-5V
Test Conditions
IC=100mA, IB=10mA IC = -1mA, VCE = -6V VCE=-6V, IC=-1mA
www.DataSheet4U.com f
T
MHz pF
VCE=-6V, IC=-10mA VCB = -10V, f = 1 MHz
Cob
CLASSIFICATION OF hFE
Rank Range Marking
P 90 - 180 M4 Y 135 - 270 M5 G 200 - 400 M6 B 300 - 600 M7
01-June-2002 Rev. A
Page 1 of 2
2SA812K
Elektronische Bauelemente -50 V, -100 mA
PNP Epitaxial Planar
Transistor
CHARACTERISTIC CURVES
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