CMSSH-3E

CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE w w w. c e n t r a l s e m i . c o m ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3E Series types are Enhanced Versions of the CMSSH-3 Series of Silicon Schottky Diodes in an SOT-323 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100mA max to 200mA MAX SOT-323 CASE CMSSH-3E: CMSSH-3AE: CMSSH-3CE: CMSSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES ♦ ♦ BVR from 30V min to 40V MIN VF from 1.0V max to 0.8V MAX CODE: CODE: CODE: CODE: 31E 3AE 3CE 3SE UNITS 40 200 350 750 250 -65 to +150 500 V mA mA mA mW °C °C/W MARKING MARKING MARKING MARKING SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA ♦Peak Repetitive Reverse Voltage ♦Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS: (TA=25°C) ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=25V VR=25V, TA=100°C IR=100µA IF=2.0mA IF=15mA IF=100mA IF=200mA VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100Ω 40 90 25 50 0.29 0.37 0.61 0.65 7.0 5.0 0.33 0.42 0.80 1.0 500 100 IR UNITS nA μA V V V V V pF ns ♦BVR ♦VF ♦VF ♦♦VF CT trr VF ♦ Enhanced specification ♦♦ Additional Enhanced specification R2 (9-February 2010) www.DataSheet4U.com CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE ENHANCED SPECIFICATION ...