CMUDM7001

CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: C7A FEATURES: SOT-523 CASE APPLICATIONS: Load/Power Switches Power Supply Converter Circuits Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM8001 UNITS 20 10 100 200 250 -65 to +150 V V mA mA mW °C SYMBOL VDS VGS ID ID PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR IDSS BVDSS VGS(th) rDS(ON) rDS(ON) rDS(ON) gFS Crss Ciss Coss ton toff VGS=10V, VDS=0 VDS=20V, VGS=0 VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=4.0V, ID=10mA VGS=2.5V, ID=10mA VGS=1.5V, ID=1.0mA VDS=10V, ID=100mA VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDD=3.0V, VGS=2.5V, ID=10mA VDD=3.0V, VGS=2.5V, ID=10mA 100 4.0 9.0 9.5 50 75 20 0.6 MAX 1.0 1.0 0.9 3.0 4.0 15 UNITS μA μA V V Ω Ω Ω m...