PROCESS
Small Signal Transistor
CP191V
NPN - Amp/Switch Transistor Chip
PROCESS DETAILS Process Die Size Die Thickne...
PROCESS
Small Signal
Transistor
CP191V
NPN - Amp/Switch
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 41,699 PRINCIPAL DEVICE TYPES CMLT2222A CMLT2207 CMLM2205 CMKT2207 EPITAXIAL PLANAR 16.5 x 16.5 MILS 7.1 MILS 3.5 x 4.3 MILS 3.5 x 4.3 MILS Al - 30,000Å Au-As - 13,000Å
R1 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
PROCESS
CP191V
Typical Electrical Characteristics
R1 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
...