PROCESS
Small Signal Transistor
CP307
NPN - Silicon Darlington Transistor Chip
PROCESS DETAILS Process Die Size Die ...
PROCESS
Small Signal
Transistor
CP307
NPN - Silicon Darlington
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 15,165 PRINCIPAL DEVICE TYPES 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 MPSA27 EPITAXIAL PLANAR 27 x 27 MILS 9.0 MILS 5.3 x 3.8 MILS 5.3 x 6.5 MILS Al - 30,000Å Au - 18,000Å
BACKSIDE COLLECTOR
R6 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
PROCESS
CP307
Typical Electrical Characteristics
R6 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
...
