PROCESS
Power Transistor
CP312
NPN - Amp/Switch Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base ...
PROCESS
Power
Transistor
CP312
NPN - Amp/Switch
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 2,230 PRINCIPAL DEVICE TYPES CZT3120 EPITAXIAL PLANAR 70 x 70 MILS 9.0 MILS 11.4 x 18.1 MILS 13.8 x 23.6 MILS Al - 30,000Å Ti/Ni/Ag - 11,300Å
R4 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
PROCESS
CP312
Typical Electrical Characteristics
R4 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
...
