PROCESS
Power Transistors
CP315V
NPN - High Current Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness B...
PROCESS
Power
Transistors
CP315V
NPN - High Current
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER EPITAXIAL PLANAR 40 x 40 MILS 7.1 MILS 7.9 x 8.7 MILS 9.0 x 14 MILS Al - 30,000Å Au - 12,000Å
6,936
PRINCIPAL DEVICE TYPES CXT3150 CZT3150
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
PROCESS
CP315V
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
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