PROCESS
Small Signal Transistors
CP316V
NPN - High Voltage Transistor Chip
PROCESS DETAILS Process Die Size Die Thic...
PROCESS
Small Signal
Transistors
CP316V
NPN - High Voltage
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 57,735 PRINCIPAL DEVICE TYPES CMPT5551 CXT5551 CZT5551 2N5551 EPITAXIAL PLANAR 20 x 20 MILS 7.1 MILS 4.0 x 4.0 MILS 4.7 x 4.7 MILS Al - 30,000Å Au - 18,000Å
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
PROCESS
CP316V
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
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