PROCESS
Small Signal Transistor
NPN - RF Transistor Chip
CP317
PROCESS DETAILS Process Die Size Die Thickness Base Bo...
PROCESS
Small Signal
Transistor
NPN - RF
Transistor Chip
CP317
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 53,788 PRINCIPAL DEVICE TYPES CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564
BACKSIDE COLLECTOR
EPITAXIAL PLANAR 14.5 x 14.5 MILS 9.0 MILS 2.4 x 2.2 MILS 2.4 x 2.2 MILS Al - 30,000Å Au - 18,000Å
R3 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
PROCESS
CP317
Typical Electrical Characteristics
R3 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
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