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CP324

Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip

Description

PROCESS Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip CP324 PROCESS DETAILS Process Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 33,500 PRINCIPAL DEVICE TYPES 2N7002 EPITAXIAL PLANAR 21.65 x 21.65 MILS 9.0 MILS 5.5 x 5.5 MI...

Central Semiconductor

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