MCH3478

Ordering number : ENA1353 MCH3478 SANYO Semiconductors DATA SHEET MCH3478 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg Duty cycle≤1% PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) When mounted on ceramic substrate (900mm2×0.8mm), PW=10s Conditions Ratings 30 ±12 2 2.5 8 0.8 1.2 150 --55 to +150 Unit V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A 0.4 1.2 2.0 Ratings min 30 1 ±10 1.3 typ max Unit V μA μA V S Marking : FK Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not b...