General-Purpose Switching Device Applications
Ordering number : ENA1353
MCH3478
SANYO Semiconductors
DATA SHEET
MCH3478
Features
• • • •
N-Channel Silicon MOSFET...
Description
Ordering number : ENA1353
MCH3478
SANYO Semiconductors
DATA SHEET
MCH3478
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg Duty cycle≤1% PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) When mounted on ceramic substrate (900mm2×0.8mm), PW=10s Conditions Ratings 30 ±12 2 2.5 8 0.8 1.2 150 --55 to +150 Unit V V A A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A 0.4 1.2 2.0 Ratings min 30 1 ±10 1.3 typ max Unit V μA μA V S
Marking : FK
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