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EMT2DXV6T5 Dataheets PDF



Part Number EMT2DXV6T5
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistor
Datasheet EMT2DXV6T5 DatasheetEMT2DXV6T5 Datasheet (PDF)

EMT2DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. http://onsemi.com (3) (2) (1) • Lead−Free Solder Plating • Low VCE(SAT), < 0.5 V MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.0 −100 Unit V V V mAdc Q2 Q1 (4) (.

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EMT2DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. http://onsemi.com (3) (2) (1) • Lead−Free Solder Plating • Low VCE(SAT), < 0.5 V MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.0 −100 Unit V V V mAdc Q2 Q1 (4) (5) (6) THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C °C/W 54 3 12 MARKING DIAGRAM 6 3M D SOT−563 CASE 463A Style 2 3M = Specific Device Code D = Date Code Symbol PD Unit mW mW/°C °C/W °C ORDERING INFORMATION Device EMT2DXV6T5 Package SOT−563 Shipping† 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.DataSheet4U.com © Semiconductor Components Industries, LLC, 2004 1 April, 2004 − Rev. 0 Publication Order Number: EMT2DXV6T5/D EMT2DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) − hFE 120 fT − COB − 140 3.5 − − pF − 560 MHz − −0.5 − Min −60 −50 −6.0 − − Typ − − − − − Max − − − −0.5 −0.5 Unit Vdc Vdc Vdc nA mA Vdc www.DataSheet4U.com http://onsemi.com 2 EMT2DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS 1000 TA = 25°C IC, COLLECTOR CURRENT (mA) 120 90 60 30 0 DC CURRENT GAIN TA = 75°C 300 mA 250 200 150 100 IB = 50 mA 0 3 6 9 12 15 10 0.1 1 10 100 TA = − 25°C TA = 25°C VCE = 10 V 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. IC − VCE VCE , COLLECTOR-EMITTER VOLTAGE (V) 2 TA = 25°C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1 Figure 2. DC Current Gain 1 0.5 TA = 25°C VCE = 5 V 5 10 20 40 60 80 100 150 200 IC, COL.


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