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EMT2DXV6T5 Dual General Purpose Transistor
PNP Dual
This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications.
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(3) (2) (1)
• Lead−Free Solder Plating • Low VCE(SAT), < 0.5 V
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.0 −100 Unit V V V mAdc
Q2
Q1
(4) (5)
(6)
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C °C/W
54 3 12
MARKING DIAGRAM
6
3M D
SOT−563 CASE 463A Style 2 3M = Specific Device Code D = Date Code
Symbol PD
Unit mW mW/°C °C/W °C
ORDERING INFORMATION
Device EMT2DXV6T5 Package SOT−563 Shipping† 2 mm Pitch 8000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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© Semiconductor Components Industries, LLC, 2004
1
April, 2004 − Rev. 0
Publication Order Number: EMT2DXV6T5/D
EMT2DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) − hFE 120 fT − COB − 140 3.5 − − pF − 560 MHz − −0.5 − Min −60 −50 −6.0 − − Typ − − − − − Max − − − −0.5 −0.5 Unit Vdc Vdc Vdc nA mA Vdc
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2
EMT2DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
1000 TA = 25°C IC, COLLECTOR CURRENT (mA) 120 90 60 30 0 DC CURRENT GAIN TA = 75°C 300 mA 250 200 150 100 IB = 50 mA 0 3 6 9 12 15 10 0.1 1 10 100 TA = − 25°C TA = 25°C VCE = 10 V
100
VCE, COLLECTOR VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 1. IC − VCE
VCE , COLLECTOR-EMITTER VOLTAGE (V) 2 TA = 25°C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1
Figure 2. DC Current Gain
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0.5
TA = 25°C VCE = 5 V
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150 200
IC, COL.