Purpose Transistor. EMT2DXV6T5 Datasheet

EMT2DXV6T5 Transistor. Datasheet pdf. Equivalent

EMT2DXV6T5 Datasheet
Recommendation EMT2DXV6T5 Datasheet
Part EMT2DXV6T5
Description Dual General Purpose Transistor
Feature EMT2DXV6T5; EMT2DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose .
Manufacture ON Semiconductor
Datasheet
Download EMT2DXV6T5 Datasheet




ON Semiconductor EMT2DXV6T5
EMT2DXV6T5
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Lead−Free Solder Plating
Low VCE(SAT), < 0.5 V
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
RqJA
Characteristic
(Both Junctions Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad.
RqJA
TJ, Tstg
Value
−60
−50
−6.0
−100
Unit
V
V
V
mAdc
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Unit
mW
mW/°C
°C/W
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3) (2)
(1)
Q2 Q1
(4) (5)
(6)
654
123
MARKING
DIAGRAM
3M D
SOT−563
CASE 463A
Style 2
3M = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
EMT2DXV6T5
Package
Shipping
SOT−563 2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
www.DataSheet4U.com
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 0
1
Publication Order Number:
EMT2DXV6T5/D



ON Semiconductor EMT2DXV6T5
EMT2DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol Min Typ Max Unit
Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
− Vdc
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
− Vdc
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
− Vdc
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)
ICBO − − −0.5 nA
Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0)
IEBO − − −0.5 mA
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Vdc
− −0.5
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
hFE
120 − 560
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
fT MHz
− 140 −
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
COB
− 3.5 − pF
www.DataSheet4U.com
http://onsemi.com
2



ON Semiconductor EMT2DXV6T5
EMT2DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25°C
120
90
60
30
0
0
2
1.5
300 mA
250
200
150
100
IB = 50 mA
3 6 9 12
VCE, COLLECTOR VOLTAGE (V)
Figure 1. IC − VCE
15
TA = 25°C
1
0.5
00.01 0.1 1 10
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
100
13
12
11
10
9
8
7
www.DataSh6e0et4U.com 1
2
VEB (V)
3
Figure 5. Capacitance
4
1000
TA = 75°C
TA = 25°C
VCE = 10 V
TA = − 25°C
100
10
0.1
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
900
800
700
600
500
400
300
200
100
0
0.2 0.5
1
TA = 25°C
VCE = 5 V
5 10 20 40 60 80 100 150 200
IC, COLLECTOR CURRENT (mA)
Figure 4. On Voltage
14
12
10
8
6
4
2
0 0 10 20 30 40
VCB (V)
Figure 6. Capacitance
http://onsemi.com
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)