BAS3010B...
Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Low forward voltage, low rev...
BAS3010B...
Medium Power AF
Schottky Diode Forward current: 1 A Reverse voltage: 30 V Low forward voltage, low reverse current For high efficiency DC/DC conversion, fast switching, protection and clamping applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101
BAS3010B-03W
Type BAS3010B-03W
Parameter Diode reverse voltage2) Forward current 2)
Package SOD323
Configuration single
Symbol VR IF Value 30 1 1 3.5 10 150 -65 ... 125 -65 ... 150
Marking 2/ red
Unit V A
Maximum Ratings at TA = 25°C, unless otherwise specified
Average rectified forward current (50/60Hz, sinus) I FAV Repetitive peak forward current I FRM (tp ≤ 1 ms, D ≤ 0.5) Non-repetitive peak surge forward current (t ≤ 10 ms) Junction temperature Operating temperature range Storage temperature www.DataSheet4U.com
1Pb-containing 2
I FSM Tj T op T stg
°C
package may be available upon special request For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.
1
2007-04-19
BAS3010B...
Thermal Resistance Parameter Junction - soldering point 1)
Symbol RthJS
Value ≤ 82
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1 A VF 230 300 360 420 480 280 350 420 480 550 5 10 20
Unit
µA
mV
AC Characteristics Diode capacitance VR = 5 V, f...