HN4G01J

HN4G01J TOSHIBA Multi Chip Discrece Device HN4G01J Audio Frequency General Purpose Amplifier Applications Q1 z z z z Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Unit: mm Q2 z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Q1 : 2SC4837F Q2 : RN1103F Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 60 50 5 150 30 Unit V V V mA mA 1.BASE1 2.EMITTER 3.BASE2 4.COLLECTOR2 5.COLLECTOR1 (B1) (E) (B2) (C2) (C1) JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014g(Typ.) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2Common) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC* Tj Tstg Rating 300 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the www.DataSheet4U.com significant change in temperature, etc.) may cause this product to decrease in the reliability ...