SemiWell Semiconductor
SBP13007-H2
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Spe...
SemiWell Semiconductor
SBP13007-H2
High Voltage Fast-Switching
NPN Power
Transistor
Features
- Very High Switching Speed (Typical
[email protected]) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical
[email protected]/1.0A) - Wide Reverse Bias S.O.A
Symbol
○
2.Collector
1.Base
○
c
○
3.Emitter
General Description
This device is designed for high voltage, high speed switching characteristic required such as switching mode power supply.
TO-220
1
2
3
Absolute Maximum Ratings
Symbol
VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature
Value
700 400 9.0 8.0 16 4.0 8.0 80 - 65 ~ 150 150
Units
V V V A A A A W °C °C
Thermal Characteristics
Symbol
RθJC RθJA www.DataSheet4U.com
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Value
1.56 62.5
Units
°C/W °C/W
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
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SBP13007-H2
Electrical Characteristics
Symbol
ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted )
Parameter
Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 )
Condition
VCE = 700V VCE = 700V IC = 10 mA IC = 2.0A IC = 5.0A IC = 8.0A IC = 5.0A IB = 0.4A IB = 1.0A IB = ...