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CY7C1524KV18 Dataheets PDF



Part Number CY7C1524KV18
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description 72-Mbit DDR II SIO SRAM 2-Word Burst Architecture
Datasheet CY7C1524KV18 DatasheetCY7C1524KV18 Datasheet (PDF)

CY7C1522KV18, CY7C1529KV18 CY7C1523KV18, CY7C1524KV18 72-Mbit DDR II SIO SRAM 2-Word Burst Architecture 72-Mbit DDR II SIO SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description The CY7C1522KV18, CY7C1529KV18, CY7C1523KV18, and CY7C1524KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with DDR II SIO (Double Data Rate Separate I/O) architecture. The DDR II SIO consists of two separate ports: the read port and the write port to access the memory array. The read port has da.

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CY7C1522KV18, CY7C1529KV18 CY7C1523KV18, CY7C1524KV18 72-Mbit DDR II SIO SRAM 2-Word Burst Architecture 72-Mbit DDR II SIO SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description The CY7C1522KV18, CY7C1529KV18, CY7C1523KV18, and CY7C1524KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with DDR II SIO (Double Data Rate Separate I/O) architecture. The DDR II SIO consists of two separate ports: the read port and the write port to access the memory array. The read port has data outputs to support read operations and the write port has data inputs to support write operations. The DDR II SIO has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1522KV18, two 9-bit words in the case of CY7C1529KV18, two 18-bit words in the case of CY7C1523KV18, and two 36-bit words in the case of CY7C1524KV18 that burst sequentially into or out of the device. Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs are tightly matched to the two output echo clocks CQ/CQ, eliminating the need to capture data separately from each individual DDR II SIO SRAM in the system design. Output data clocks (C/C) enable maximum system clocking and data synchronization flexibility. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. 72 Mbit Density (8 M × 8, 8 M × 9, 4 M × 18, 2 M × 36) 333 MHz Clock for High Bandwidth 2-word Burst for reducing Address Bus Frequency Double Data Rate (DDR) Interfaces (data transferred at 666 MHz) at 333 MHz Two Input Clocks (K and K) for precise DDR Timing ❐ SRAM uses rising edges only Two Input Clocks for Output Data (C and C) to minimize Clock Skew and Flight Time mismatches Echo Clocks (CQ and CQ) simplify Data Capture in High Speed Systems Synchronous Internally Self timed Writes DDR II operates with 1.5 Cycle Read Latency when DOFF is asserted HIGH Operates similar to DDR-I Device with 1 Cycle Read Latency when DOFF is asserted LOW 1.8 V Core Power Supply with HSTL Inputs and Outputs Variable Drive HSTL Output Buffers Expanded HSTL Output Voltage (1.4 V–VDD) ❐ Supports both 1.5 V and 1.8 V IO supply Available in 165-ball FBGA Package (13 × 15 × 1.4 mm) Offered in both Pb-free and non Pb-free Packages JTAG 1149.1 compatible Test Access Port Phase Locked Loop (PLL) for accurate Data Placement ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Configurations CY7C1522KV18 – 8 M × 8 CY7C1529KV18 – 8 M × 9 CY7C1523KV18 – 4 M × 18 CY7C1524KV18 – 2 M × 36 Selection Guide Description Maximum Operating Frequency www.DataSheet4U.com Maximum Operating Current ×8 ×9 × 18 × 36 333 MHz 333 510 510 520 640 300 MHz 300 480 480 490 600 250 MHz 250 420 420 430 530 200 MHz 200 370 370 380 450 167 MHz 167 340 340 340 400 Unit MHz mA Cypress Semiconductor Corporation Document Number: 001-00438 Rev. *I • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised March 11, 2011 [+] Feedback CY7C1522KV18, CY7C1529KV18 CY7C1523KV18, CY7C1524KV18 Logic Block Diagram (CY7C1522KV18) D[7:0] 8 Write Add. Decode Read Add. Decode A(21:0) 22 Address Register Write Data Reg Write Data Reg 4M x 8 Array 4M x 8 Array LD Control Logic R/W C C CQ K K DOFF R/W VREF LD NWS[1:0] Control Logic CLK Gen. Read Data Reg. 16 8 8 Reg. Reg. Reg. 8 8 8 CQ Q[7:0] Logic Block Diagram (CY7C1529KV18) D[8:0] 9 Write Add. Decode Read Add. Decode A(21:0) 22 Address Register Write Data Reg Write Data Reg 4M x 9 Array 4M x 9 Array LD Control Logic R/W C C CQ K K DOFF R/W www.DataSheet4U.com V REF CLK Gen. Read Data Reg. 18 Control Logic 9 9 Reg. Reg. Reg. 9 9 9 CQ LD BWS[0] Q[8:0] Document Number: 001-00438 Rev. *I Page 2 of 31 [+] Feedback CY7C1522KV18, CY7C1529KV18 CY7C1523KV18, CY7C1524KV18 Logic Block Diagram (CY7C1523KV18) D[17:0] 18 Write Add. Decode Read Add. Decode A(20:0) 21 Address Register Write Data Reg Write Data Reg 2M x 18 Array 2M x 18 Array LD Control Logic R/W C C CQ K K DOFF R/W VREF LD BWS[1:0] Control Logic CLK Gen. Read Data Reg. 36 18 18 Reg. Reg. Reg. 18 18 CQ 18 Q[17:0] Logic Block Diagram (CY7C1524KV18) D[35:0] 36 Write Add. Decode Read Add. Decode A(19:0) 20 Address Register Write Data Reg Write Data Reg 1M x 18 Array 1M x 18 Array LD Control Logic R/W C C CQ K K DOFF R/W www.DataSheet4U.com .


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