CY7C1243V18

CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features Separate independent read and write data ports — Supports concurrent transactions 300 MHz to 375 MHz clock for high bandwidth 4-Word Burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 750 MHz) at 375 MHz Read latency of 2.0 clock cycles Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only Echo clocks (CQ and CQ) simplify data capture in high-speed systems Single multiplexed address input bus latches address inputs for both read and write ports Separate Port Selects for depth expansion Data valid pin (QVLD) to indicate valid data on the output Synchronous internally self-timed writes Available in x8, x9, x18, and x36 configurations Full data coherency providing most current data Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1] HSTL inputs and Variable drive HSTL output buffers Available in 165-ball FBGA package (15 x 17 x 1.4 mm) Offered in both Pb-free and non Pb-free packages JTAG 1149.1 compatible test access port Delay Lock Loop (DLL) for accurate data placement Functional Description The CY7C1241V18, CY7C1256V18, CY7C1243V18, and CY7C1245V18 are 1.8V Synchronous Pipelined SRAMs, equipped with Quad Data Rate-II+ (QDR-II+) architecture. QDR-II+ architecture consists of two separate ports to access the memory...