CY62147DV30

CY62147DV30 4-Mbit (256K x 16) Static RAM Features Temperature Ranges — Industrial: –40°C to +85°C — Automotive-A: –40°C to +85°C — Automotive-E: –40°C to +125°C Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin-compatible with CY62147CV25, CY62147CV30, and CY62147CV33 Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax Ultra low standby power Easy memory expansion with CE, and OE features Automatic power-down when deselected CMOS for optimum speed/power Available in Pb-free and non Pb-free 48-ball VFBGA and non Pb-free 44-pin TSOPII Byte power-down feature vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7...