2sc4159

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4159 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min) ·Large Current Capacity ·Complement to Type 2SA1606 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4159 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 10mA; VCE= 5V ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 300mA; VCE= 5V fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 10V ...