DatasheetsPDF.com

2SD2623 Dataheets PDF



Part Number 2SD2623
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planar type Transistor
Datasheet 2SD2623 Datasheet2SD2623 Datasheet (PDF)

Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm (0.425) ■ Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak col.

  2SD2623   2SD2623



Document
Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm (0.425) ■ Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 150 150 −55 to +150 Unit V V V A A mW °C °C 10˚ (0.65) (0.65) 1.3±0.1 2.0±0.2 0.9±0.1 0.9+0.2 –0.1 1 : Base 2 : Emitter 3 : Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 2V ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3 *1 Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) VBE(sat) fT Cob Ron Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min 25 20 12 0 to 0.1 Typ Max Unit V V V 100 200 0.14 800 0.40 1.2 200 10 1.0 nA  V V MHz pF Ω www.DataSheet4U.com 2. 1: Pulse measurement Rank hFE Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. * *2: Rank classification *3: Ron Measuremet circuit R 200 to 350 S 300 to 500 T 400 to 800 IB = 1 mA 1 kΩ f = 1 kHz V = 0.3 V VB VV VA Ron = VB × 1 000 (Ω) VA − VB 0.2±0.1 Publication date: February 2003 SJC00284BED 1 2SD2623 PC  Ta 160 IC  VCE 0.8 IB = 4.0 mA 3.5 mA 3.0 mA 2.5 mA 2.0 mA 1.5 mA 1.0 mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 1 IC / IB = 25 Collector power dissipation PC (mW) Collector current IC (A) 120 0.6 0.1 Ta = 75°C 25°C −25°C 80 0.4 0.01 40 0.5 mA 0.2 0 0 40 80 120 160 0 Ta = 25°C 0 1 2 3 4 5 6 0.001 0.1 1 10 100 1 000 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (mA) VBE(sat)  IC 10 IC / IB = 10 hFE  IC Collector output capacitance C (pF) (Common base, input open circuited) ob 600 VCE = 2 V Cob  VCB 100 f = 1 MHz Ta = 25°C Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 480 Ta = 75°C 25°C −25°C 1 25°C 75°C Ta = −25°C 360 10 240 0.1 120 0.01 1 10 102 103 104 105 0 0.1 1 10 100 1 000 1 0 10 20 30 Collector current IC (µA) Collector current IC (mA) Collector-base voltage VC.


2SD2621 2SD2623 IN5391


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)