Document
Transistors
2SD2623
Silicon NPN epitaxial planar type
For low-frequency amplification
Unit: mm
(0.425)
■ Features
• Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
0.3+0.1 –0.0 3
0.15+0.10 –0.05
1.25±0.10
2.1±0.1 5˚
1
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 150 150 −55 to +150 Unit V V V A A mW °C °C
10˚
(0.65) (0.65) 1.3±0.1 2.0±0.2
0.9±0.1
0.9+0.2 –0.1
1 : Base 2 : Emitter 3 : Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: 2V
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3
*1
Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) VBE(sat) fT Cob Ron
Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min 25 20 12
0 to 0.1
Typ
Max
Unit V V V
100 200 0.14 800 0.40 1.2 200 10 1.0
nA V V MHz pF Ω
www.DataSheet4U.com 2. 1: Pulse measurement
Rank hFE
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. * *2: Rank classification *3: Ron Measuremet circuit R 200 to 350 S 300 to 500 T 400 to 800
IB = 1 mA 1 kΩ
f = 1 kHz V = 0.3 V VB VV VA
Ron =
VB × 1 000 (Ω) VA − VB
0.2±0.1
Publication date: February 2003
SJC00284BED
1
2SD2623
PC Ta
160
IC VCE
0.8 IB = 4.0 mA 3.5 mA 3.0 mA 2.5 mA 2.0 mA 1.5 mA 1.0 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
1 IC / IB = 25
Collector power dissipation PC (mW)
Collector current IC (A)
120
0.6
0.1
Ta = 75°C 25°C −25°C
80
0.4
0.01
40
0.5 mA 0.2
0
0
40
80
120
160
0
Ta = 25°C 0 1 2 3 4 5 6
0.001 0.1
1
10
100
1 000
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
VBE(sat) IC
10 IC / IB = 10
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
600 VCE = 2 V
Cob VCB
100 f = 1 MHz Ta = 25°C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
480
Ta = 75°C 25°C −25°C
1
25°C 75°C
Ta = −25°C
360
10
240
0.1
120
0.01
1
10
102
103
104
105
0 0.1
1
10
100
1 000
1
0
10
20
30
Collector current IC (µA)
Collector current IC (mA)
Collector-base voltage VC.