Low VF Switching Diode
Ordering number : ENA1745
UD1006FR
SANYO Semiconductors
DATA SHEET
UD1006FR
Features
• •
Diffused Junction Silicon ...
Description
Ordering number : ENA1745
UD1006FR
SANYO Semiconductors
DATA SHEET
UD1006FR
Features
Diffused Junction Silicon Diode
Low VF Switching Diode
VRRM=600V. trr=60ns(typ) (IF=0.5A, IR=1A).
VF=1.3V max (IF=10A). Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM Conditions Ratings 600 600 50Hz resistive load, Sine wave Tc=79°C Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited Sine wave 10ms 1pulse 10 18 120 150 --55 to +150 Unit V V A A A °C °C
IO IF(RMS) IFSM
Tj Tstg
Package Dimensions
unit : mm (typ) 7532-001
10.16 3.18 3.3 4.7 2.54
Product & Package Information
Package : TO-220F-2FS JEITA, JEDEC : SC-67 Minimum Packing Quantity : 50pcs./magazine
Marking
15.87
6.68
3.23
1.28
UD1006 FR LOT No.
2.76
15.8
0.8 MAX
*
1.47 MAX 0.8 1
2
12.98
0.5 part is not a metal * : This but a resin
Electrical Connection
2
5.08
1 : Cathode 2 : Anode
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51910SA TK IM TC-00002308 No. A1745-1/3
UD1006FR
Electrical Characteristics at Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=10A VR=600V IF=10A, di / dt=100A/μs IF=0.5A, IR=1A Junction -C...
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